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  Datasheet File OCR Text:
 Ordering number:ENN5613
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1973/2SC5310
DC/DC Converter Applications
Features
* Adoption of FBET, MBIT processes. * Large current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching. * Ultrasmall package facilitates miniaturization in end products.
Package Dimensions
unit:mm 2018B
[2SA1973/2SC5310]
0.5
0.4 3 0.16
0 to 0.1
0.5
1
0.95 0.95 2 1.9 2.9
1.5
2.5
Specifications
( ) : 2SA1973 Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg
Mounted on a glass-epoxy board (20x30x1.6mm)
1 : Base 2 : Emitter 3 : Collector SANYO : CP
Conditions
0.8 1.1
Ratings (-)30 (-)25 (-)6 (-)1 (-)3 (-)200 250 150 -55 to +150
Unit V V V A A mA mW
C C
Electrical Characteristics at Ta = 25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE VCB=(-)20V, IE=0 VEB=(-)3V, IC=0 VCE=(-)2V, IC=(-)100mA 135* Conditions Ratings min typ max (-)0.1 (-)0.1 400* Unit A A
* : The 2SA1973/2SC5310 are classified by 100mA hFE as follows :
Rank hFE 135 5 to 270 200 6 to 400
Continued on next page.
Marking : 2SA1973 : NS 2SC5310 : NN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60100TS (KOTO) TA-1556 No.5613-1/4
2SA1973/2SC5310
Continued on preceding page.
Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol fT Cob VCE(sat) VBE(sat) Conditions VCE=(-)10V, IC=(-)50mA VCB=(-)10V, f=1MHz IC=(-)500mA, IB=(-)25mA IC=(-)500mA, IB=(-)25mA (-)30 (-)25 (-)6 (60)60 (350) 500 (25)25 Ratings min typ 150 (32)19 (-150) 100 (-)0.85 (-300) 200 (-)1.2 max Unit MHz pF mV mV V V V V ns ns ns ns
V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO ton tstg tf IE=(-)10A, IC=0 See specified Test Circuit See specified Test Circuit See specified Test Circuit
Switching Time Test Circuit
PW=20s D.C.1% INPUT VR 50 + 100F VBE=--5V + 470F VCC=12V IB1 IB2 1k OUTPUT RL
20IB1= --20IB2= IC=500mA (For PNP, the polarity is reversed.)
--1.0
IC -- VCE
2SA1973 Pulse
Collector Current, IC - A
1.0
IC -- VCE
2SC5310 Pulse
6mA
Collector Current, IC - A
--0.8
0.8
--0.6
0.6
--6mA
--0.4
4mA
0.4
--4mA
2mA
0.2
--0.2
--2mA IB=0
0 --0.4 --0.8 --1.2 --1.6 --2.0 ITR08234
0
0 0 0.4 0.8 1.2
IB=0
1.6 2.0 ITR08235
Collector-to-Emitter Voltage, VCE - V
--1000
Collector-to-Emitter Voltage, VCE - V
1000
IC -- VBE
2SA1973 VCE=--2V Pulse
IC -- VBE
2SC5310 VCE=2V Pulse
Collector Current, IC - mA
--600
Collector Current, IC - mA
--800
800
600
--200
Ta=7 5C 25C --25C
--400
400
200
0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2
0 0 0.2 0.4 0.6 0.8 1.0 1.2 ITR08237
Base-to-Emitter Voltage, VBE - V
ITR08236
Base-to-Emitter Voltage, VBE - V
Ta=75 C 25C --25C
No.5613-2/4
2SA1973/2SC5310
1000 7 5
hFE -- IC
2SA1973 VCE=--2V Pulse
5
hFE -- IC
2SC5310 VCE=2V Pulse
3
DC Current Gain, hFE
3 2
Ta=75C 25C
--25C
DC Current Gain, hFE
Ta=75C
2
25C
--25C
100
100 7 7 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Collector Current, IC - A
1000 7
ITR08238 1000
Collector Current, IC - A
ITR08239
f T -- IC
Gain-Bandwidth Product, fT - MHz
2SA1973 VCE=--10V Pulse
f T -- IC
2SC5310 VCE=10V Pulse
7 5 3 2
Gain-Bandwidth Product, fT - MHz
5 3 2
100 7 5 3 2
100 7 5 3 2
10 --10
10 2 3 5 7
Collector Current, IC - mA
--100
2
3
5
7 --1000 ITR08240 100
10
2
3
5
7
Collector Current, IC - mA
100
2
3
5
7 1000 ITR08241
100
Cob -- VCB
2SA1973 f=1MHz
Cob -- VCB
2SC5310 f=1MHz
Output Capacitance, Cob - pF
Output Capacitance, Cob - pF
7 2 3 5 7 2 3 5
7
7
5
5
3
3
2
2
10 --1.0
10
Collector-to-Base Voltage, VCB -- V
--10
7
1.0
2
3
5
7
ITR08242 5 3 2
Collector-to-Base Voltage, VCB -- V
10
2
3
5
ITR08243
--1000 7
VCE(sat) -- IC
Collector-to-Emitter Saturation Voltage, VCE (sat) - mV
2SA1973 IC / IB=20 Pulse
VCE(sat) -- IC
2SC5310 IC / IB=20 Pulse
Collector-to-Emitter Saturation Voltage, VCE (sat) - mV
5 3 2
100 7 5 3 2
--100 7 5 3 2
7 Ta=
C 25
7 --0.01 2 3
5C
5C --2
= Ta
2
C 75 5 C --2 5C
--10 7
10 7 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
5
7 --0.1
2
3
5
7 --1.0
2
3
Collector Current, IC - A
ITR08244
Collector Current, IC - A
ITR08245
No.5613-3/4
2SA1973/2SC5310
3
VBE(sat) -- IC
Base-to-Emitter Saturation Voltage, VBE (sat) - V
Base-to-Emitter Saturation Voltage, VBE (sat) - V
2
2SA1973 IC / IB=20 Pulse
3
VBE(sat) -- IC
2SC5310 IC / IB=20 Pulse
2
--1.0
1.0
--25C
7
--25C
7
Ta=75C
5
25C
Ta=75C
25C
5
3 7 --0.01 2 3 5
3
Collector Current, IC - A
7 --0.1
2
3
5
7 --1.0
2
3
7 0.01
2
3
5
ITR08246 280 250 240
Collector Current, IC - A
7 0.1
2
3
5
7 1.0
2
3
ITR08247
7 5 3 2
ASO
ICP IC 2SA1973 / 2SC5310
Collector Dissipation, PC - mW
PC -- Ta
2SA1785 2SC4645 2SA1973 / 2SC5310
M
0 =1 PT
Collector Current, IC - A
ou
nt
1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5
10
DC
ed
0
1m s
ms
200
on
s
ag
las
160
s-e
op
po
era
xy
tio
n
120
bo
ar
d
(2
0x
80
30
Ta=25C Single pulse Mounted on a glass-epoxy board (20x30x1.6mm) For PNP, the minus sign (-) is omitted.
2 3 5 7
x1 .
6m
m
40 0
)
Collector-to-Emitter Voltage, VCE - V
1.0
2
3
5
7
10
2
3
5
0
20
40
60
80
100
120
140
160
ITR08248
Ambient Temperature, Ta - C
ITR08249
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of June, 2000. Specifications and information herein are subject to change without notice.
PS No.5613-4/4


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